Ionic liquid gating of single-walled carbon nanotube devices with ultra-short channel length down to 10 nm

نویسندگان

چکیده

Ionic liquids enable efficient gating of materials with nanoscale morphology due to the formation a double layer that can also follow strongly vaulted surfaces. On carbon nanotubes, this lead cylindrical gate layer, allowing an ideal control drain current even at small voltages. In work, we apply ionic liquid chirality-sorted (9, 8) nanotubes bridging metallic electrodes gap sizes 20 nm and 10 nm. The single-tube devices exhibit diameter-normalized densities up 2.57 mA/μm, on-off ratios 104, subthreshold swing down 100 mV/dec. Measurements after long vacuum storage indicate hysteresis gated depends not only on voltage sweep rate polarization dynamics but charge traps in vicinity nanotube, which, turn, might act as trap states for ions. ambipolar transfer characteristics are compared calculations based Landauer–Büttiker formalism. Qualitative agreement is demonstrated, possible reasons quantitative deviations improvements model discussed. Besides being fundamental interest, results have potential relevance biosensing applications employing high-density device arrays.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Optical detection of individual ultra-short carbon nanotubes enables their length characterization down to 10 nm

Ultrashort single-walled carbon nanotubes, i.e. with length below ~30 nm, display length-dependent physical, chemical and biological properties that are attractive for the development of novel nanodevices and nanomaterials. Whether fundamental or applicative, such developments require that ultrashort nanotube lengths can be routinely and reliably characterized with high statistical data for hig...

متن کامل

Effects of ionic surfactant adsorption on single-walled carbon nanotube thin film devices in aqueous solutions.

Field-effect transistors were fabricated using high-density single-walled carbon nanotube (SWNT) thin films directly grown on suitable substrates. Such approach eliminated the variations of device behaviors in individual SWNT devices by utilizing a large number of SWNTs in each device. We have found that the behaviors of such devices are closely related to the surface charge densities around SW...

متن کامل

Fabrication of porous ultra-short single-walled carbon nanotube nanocomposite scaffolds for bone tissue engineering.

We investigated the fabrication of highly porous scaffolds made of three different materials [poly(propylene fumarate) (PPF) polymer, an ultra-short single-walled carbon nanotube (US-tube) nanocomposite, and a dodecylated US-tube (F-US-tube) nanocomposite] in order to evaluate the effects of material composition and porosity on scaffold pore structure, mechanical properties, and marrow stromal ...

متن کامل

Molecular electronic devices based on single-walled carbon nanotube electrodes.

As the top-down fabrication techniques for silicon-based electronic materials have reached the scale of molecular lengths, researchers have been investigating nanostructured materials to build electronics from individual molecules. Researchers have directed extensive experimental and theoretical efforts toward building functional optoelectronic devices using individual organic molecules and fab...

متن کامل

Photoswitching in azafullerene encapsulated single-walled carbon nanotube FET devices.

The photoinduced electrical transport properties of C(59)N@SWNTs are investigated by assembling them into FET devices. Our findings demonstrate that azafullerene molecules inside SWNTs make nanotube FET devices very sensitive to UV light exposure by the decrease of source-drain current upon light exposure. The photoswitching effect is found to be dependent on wavelengths of light and becomes ne...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2021

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0034792